Lower gate oxide failure rates during the lifetime and no early failures translate into the highest possible gate oxide quality for the customer side. The number of power modules with SiC components will be complemented detailed with even more parts, using either the combination of SiC diodes with silicon transistors https://www.facebook.com/permalink.php?story_fbid=pfbid05B5NsVb7B6tL8oK3RNyTBDmn2BkeJRKdCpLrV2Ba1NqhRXEXzaCw1mm1PYHeVpayl&id=61562415773754&__cft__[0]=AZU71z4e4v0RrbhwcBFAKnAb-bgop12lLD5xzvzJ4I1yGolDJo-bYUyTaw3rgclo565KY_hpMb_nQ7Y80BCPV2T8MUt85ipd4J7ve04pYU615diQfAyJJkSpOyQF13vCVr5EImjfHSLzs9jD8C0Ndh4GV4nyZNkTjU2Pcv6sL13IYPrh-h7TSiMSM0gDCWTdDtspANKYKd0WfD27RXk_efQd&__tn__=%2CO%2CP-R